Optical Properties of ITO/ZnO Schottky Diode with Enhanced UV Photoresponse

摘要

Photoluminescence (PL) spectra of zinc oxide (ZnO) samples with differenthydrogen peroxide (H2O2) treatment durations were measured to examine severalpoint defects on the surface of the films. These results suggest successfuloxidation through the reaction between oxygen radicals dissociated from H2O2and the ZnO surface. To further confirm the defect induced gain mechanism, wefabricate highly transparent Schottky diodes, and measure the key diodecharacteristics. Photocurrents are measured under different wavelengths, andpossible explanations of the high optical gain within the ultraviolet (UV)region are provided.